[PDF.02pm] 1 Bit Full Adder Cell for reducing low leakage current: VLSI

1 Bit Full Adder Cell for reducing low leakage current: VLSI

[PDF.yo92] 1 Bit Full Adder Cell for reducing low leakage current: VLSI

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 |  2012-11-06 |  2012-11-06 | Original language:English | PDF # 1 |  8.66 x.25 x5.91l,.37 | File type: PDF | 108 pages

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||About the Author|Mrs. S.Madhuri (wife of B.Krishna Kishore,Assistant Engineer) holds M.Tech in India from Vagdevi Institute of Technology,Proddatur(India).She completed B.Tech (Under Graduation) from J.N.T.U,Hyderabad(India) and an M.Tech in VLSI from Jawaharlal

As technology scales into the nanometer regime leakage current, active power, delay and area are the important metric for the analysis and design of complex arithmetic logic circuits. In this paper, low leakage 1bit full adder cell are proposed for mobile applications and a novel technique has been introduced with improved staggered phase damping technique and also Gated Diffusion Input (GDI) technique for further reduction in the Active power. Leakage power is being e...

You can specify the type of files you want, for your gadget.1 Bit Full Adder Cell for reducing low leakage current: VLSI   |  Madhuri Sada.Not only was the story interesting, engaging and relatable, it also teaches lessons.

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