[PDF.21sx] Copper Interconnect for Silicon ULSI: Seedless Copper Electrochemical Deposition for ULSI Interconnect

Copper Interconnect for Silicon ULSI: Seedless Copper Electrochemical Deposition for ULSI Interconnect

[PDF.cp85] Copper Interconnect for Silicon ULSI: Seedless Copper Electrochemical Deposition for ULSI Interconnect

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 | #17337228 in Books |  2008-12-23 | Original language:English | PDF # 1 |  8.66 x.32 x5.91l,.49 | File type: PDF | 140 pages

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||About the Author|Dr. Sunjung Kim earned his Ph.D. in Engineering Science (Materials Engineering) at Rensselaer Polytechnic Institute in 2003. His research interest is the electrochemical application in microelectronics, energy storage, and corrosion. He is now a

Electrochemical Deposition (ECD) has become the most promising technology for copper interconnect on ULSI circuits since 1997. Dual damascene technology followed by ECD has allowed for copper to replace aluminum in the ULSI interconnect. The ECD method needs a seed layer, but it becomes more difficult to conformally deposit a seed layer for copper ECD as the feature size decreases beyond 65 nm. Depositing seed layers on diffusion barrier layers, the inner volume of trenc...

You easily download any file type for your device.Copper Interconnect for Silicon ULSI: Seedless Copper Electrochemical Deposition for ULSI Interconnect   |  Sunjung Kim. A good, fresh read, highly recommended.

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