[PDF.78bx] Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications (Wiley - IEEE)
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Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications (Wiley - IEEE)
Tsunenobu Kimoto, James A. Cooper
[PDF.fa61] Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications (Wiley - IEEE)
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| #1525934 in Books | 2014-11-24 | Original language:English | PDF # 1 | 9.70 x1.30 x6.60l,.0 | File type: PDF | 400 pages||0 of 1 people found the following review helpful.| Great overview|By Doug Baker|excellent overview of SiC technology|0 of 1 people found the following review helpful.| Five Stars|By K. Smith|satisfied, A+|0 of 1 people found the following review helpful.| Five Stars|By Customer|A+++++++++++|||“Students or working professionals interested in SiC technology will find this book worth reading.” (IEEE Electrical Insulation Magazine, 1 November 2015) |“If you have any interest in the now emerging SiC semiconductor devices,
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications
Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a varie...
You can specify the type of files you want, for your device.Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications (Wiley - IEEE) | Tsunenobu Kimoto, James A. Cooper. I was recommended this book by a dear friend of mine.