[PDF.53fx] Photo-induced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering)
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Photo-induced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering)
David Redfield, Richard H. Bube
[PDF.ky83] Photo-induced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering)
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| #3808466 in Books | Cambridge University Press | 1996-01-26 | Original language:English | PDF # 1 | 8.98 x.67 x5.98l,1.06 | File type: PDF | 230 pages | |||"This book by Redfield and Bube gives a comprehensive review of the subject. In my opinion, the authors review the most important PI defects in crystalline and amorphous semiconductors, focusing on existing models without mathematical complications and emphas
This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional c...
You easily download any file type for your device.Photo-induced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) | David Redfield, Richard H. Bube. I was recommended this book by a dear friend of mine.