| #4089094 in Books | 2016-06-07 | Original language:English | PDF # 1 | 9.57 x.54 x6.27l,.0 | File type: PDF | 140 pages||0 of 0 people found the following review helpful.| Great 4 Device Engineers & Techs ...!|By Mark B. Smith|Vastly exceeded my expectations ... Near perfect adjust to my job ...|0 of 0 people found the following review helpful.| Very helpful reference.|By Si-Woo Lee|Very helpful reference and contains recent CMOS variation studies.|From the Back Cover||This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluct
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as...
You easily download any file type for your gadget.Variation-Aware Advanced CMOS Devices and SRAM (Springer Series in Advanced Microelectronics) | Changhwan Shin. A good, fresh read, highly recommended.
